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PD - 91258F
IRLML2803
HEXFET ? Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
G 1
S 2
3 D
V DSS = 30V
R DS(on) = 0.25 Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Micro3 ?
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
1.2
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
E AS
dv/dt
T J , T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak diode Recovery dv/dt
Junction and Storage Temperature Range
0.93
7.3
540
4.3
±20
3.9
5.0
-55 to + 150
A
mW
mW/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient
–––
230
°C/W
www.irf.com
1
12/14/11
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